Enhanced annealing kinetics in ion-implanted In_xAl_1-xAs studied by x-ray diffractometryCLARKE, R; DOS PASSOS, W; YI-JEN CHAN et al.Applied physics letters. 1991, Vol 58, Num 20, pp 2267-2269, issn 0003-6951Article

Double junction AllnAs/GaInAs multiquantum well avalanche photodiodesLE BELLEGO, Y; PRASEUTH, J. P; SCAVENNEC, A et al.Electronics Letters. 1991, Vol 27, Num 24, pp 2228-2230, issn 0013-5194Article

Determination of refractive indexes of In_0.52Al_0.48As on InP in the wavelength range from 250 to 1900 nm by spectroscopic ellipsometryDINGES, H. W; BURKHARD, H; LÖSCH, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 20, Num 1-2, pp 180-182, issn 0921-5107Conference Paper

40-GHz bandwith InGAAs/InGaAs multiple quantum well optical intensity modulatorMITOMI, O; KOTAKA, I; WAKITA, K et al.Applied optics. 1992, Vol 31, Num 12, pp 2030-2035, issn 0003-6935Article

High-speed InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators with bandwidth in excess of 20 GhzWAKITA, K; KOTAKA, I; ASAI, H et al.IEEE photonics technology letters. 1992, Vol 4, Num 1, pp 29-31Article

InGaAsP-InAlAs superlattice avalance photodiodeKAGAWA, T; KAWAMURA, Y; IWAMURA, H et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 6, pp 1419-1423, issn 0018-9197Article

Resonant-cavity InGaAIAs/InGaAs/InAIAs phototransistors with high gain for 1.3-1.6 μmANANTH DODABALAPUR; CHANG, T. Y.Applied physics letters. 1992, Vol 60, Num 8, pp 929-931, issn 0003-6951Article

Influence of surface layers on the RF-performance of AlInAs-GaInAs HFET'sDICKMANN, J; DÄMBKES, H; NICKEL, H et al.IEEE microwave and guided wave letters. 1992, Vol 2, Num 12, pp 472-474Article

Influence of the desorption and growth temperatures on the crystalline quality of molecular-beam epitaxy InAIAs layersPEIRO, F; CORNET, A; HERMS, A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 5, pp 2148-2152, issn 0734-211XArticle

Electroabsorption modulator based on Wannier-Stark localization with 20 GHz/V efficiencyDEVAUX, F; BIGAN, E; ALLOVON, M et al.Applied physics letters. 1992, Vol 61, Num 23, pp 2773-2775, issn 0003-6951Article

Photodiode Métal-Semiconducteur-Métal (MSM) AlInAs/GaInAs pour transmission sur fibre optique = AlInAs/GaInAs Metal-Semiconductor-Metal (MSM) photodiode for optical fiber transmissionTemmar, Abdelkader; Alquie, Claude.1992, 192 p.Thesis

An InGaAs/InAlAs superlattice avalanche photodiode with a gain bandwidth product of 90 GHzKAGAWA, T; ASAI, H; KAWAMURA, Y et al.IEEE Photonics technology letters. 1991, Vol 3, Num 9, pp 815-817Article

Observation of low-chirp modulation in InGaAs-InAlAs multiple-quantum-well optical modulators under 30 GHzWAKITA, K; KOTAKA, I; MITOMI, O et al.IEEE Photonics technology letters. 1991, Vol 3, Num 2, pp 138-140Article

Improved breadown of AllNAs/InGaAs heterojunction bipolar transistorsFULLOWAN, T. R; PEARTON, S. J; KOPF, R. F et al.Electronics Letters. 1991, Vol 27, Num 25, pp 2340-2341, issn 0013-5194Article

DC and microwave performance of OMVPE-grown AIInAs/InP HEMTsAINA, L; SERIO, M; MATTINGLY, M et al.Electronics Letters. 1990, Vol 26, Num 22, pp 1912-1913, issn 0013-5194Article

InAlAs/InGaAs/InP junction HEMTsBOOS, J. B; BINARI, S. C; KRUPPA, W et al.Electronics Letters. 1990, Vol 26, Num 15, pp 1172-1173, issn 0013-5194Article

Monolithic InP cascode HEMT distributed amplifier from 5 to 40 GHzYUEN, C; PAO, Y. C; DAY, M et al.Electronics Letters. 1990, Vol 26, Num 17, pp 1411-1412, issn 0013-5194Article

1.3 μm electroabsorption reflection modulators on GaAsLORD, S. M; TREZZA, J. A; LARSON, M. C et al.Applied physics letters. 1993, Vol 63, Num 6, pp 806-808, issn 0003-6951Article

Ellipsometric characterization of In_0.52Al_0.48As and of modulation doped field effect transistor structures on InP substratesALTEROVITZ, S. A; SIEG, R. M; PAMULAPATI, J et al.Applied physics letters. 1993, Vol 62, Num 12, pp 1411-1413, issn 0003-6951Article

Confinement of high Be doping levels in AllnAs/GaInAs npn heterojunction bipolar transistors by low temperature molecular-beam epitaxial growthMETZGER, R. A; HAFIZI, M; STANCHINA, W. E et al.Applied physics letters. 1993, Vol 63, Num 10, pp 1360-1362, issn 0003-6951Article

Piezoelectric-induced current asymmetry in [111] InGaAs/InAlAs resonant tunneling diodes for microwave mixingHERNANDEZ, J. M; IZPURA, I; CALLEJA, E et al.Applied physics letters. 1993, Vol 63, Num 6, pp 773-775, issn 0003-6951Article

Optimization of optical waveguide modulators based on Wannier-Stark localization : an experimental studyBIGAN, E; ALLOVON, M; CARRE, M et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 1, pp 214-223, issn 0018-9197Article

High-performance back-illuminated InGaAs/InAlAs MSM photodetector with a record responsivity of 0.96 A/WKIM, J. H; TORSTEN GRIEM, H; FRIEDMAN, R. A et al.IEEE photonics technology letters. 1992, Vol 4, Num 11, pp 1241-1244, issn 1041-1135Article

Simulation of the refractive index properties of a tunable-electron-density quantum well and reservoir structureWANG, J; LEBURTON, J. P; SENGERS, A. J et al.IEEE Photonics technology letters. 1991, Vol 3, Num 8, pp 709-711Article

Performance characteristics of In_0.6Ga_0.As/In_0.52Al_0.48As modulation-doped field-effect transistor monolithically integrated with In_0.53Ga_0.47As p-i-n photodiodesZEBDA, Y; BHATTACHARYA, P. K; PAVLIDIS, D et al.Journal of applied physics. 1990, Vol 68, Num 4, pp 1918-1920, issn 0021-8979Article